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savantic semiconductor product specification silicon npn power transistors 2SD315 description with to-66 package complement to type 2sb509 applications for use in audio frequency power amplifier application pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 60 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 5 v i c collector current 4 a i cm collector current-peak 10 a p c collector power dissipation t c =25 35 w t j junction temperature 150 t stg storage temperature -40~150 fig.1 simplified outline (to-66) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD315 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 60 v v cesat collector-emitter saturation voltage i c =2a; i b =0.2a 1.0 v v be base-emitter on voltage i c =1a ; v ce =2v 1.5 v i cbo collector cut-off current v cb =20v; i e =0 0.1 ma i ebo emitter cut-off current v eb =4v; i c =0 1.0 ma h fe-1 dc current gain i c =1a ; v ce =2v 40 320 h fe-2 dc current gain i c =0.1a ; v ce =2v 40 f t transition frequency i c =0.5a ; v ce =5v 8 mhz h fe-1 classifications c d e f 40-80 60-120 100-200 160-320
savantic semiconductor product specification 3 silicon npn power transistors 2SD315 package outline fig.2 outline dimensions

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